AS6C62256 - 32K X 8 BIT LOW POWER CMOS SRAM · Alliance Semi 2008/12/26 09:42. GENERAL DESCRIPTION The AS6C62256 is a 262144-bit low power CMOS static random access memory organized as 32768 words by 8 bits. It is fabricated using very

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Solid State Technology - Seiko Epson develops bendable SRAM device - October 4, 2005 - Seiko Epson Corp. has made what it claims is the world's first bendable SRAM (static random access memory) device, using low-temperature polysilicon

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in a statement seiko epson said that they have “succeeded in transferring sram circuits initially formed on low-temperature polycrystalline si tft glass substrates onto plastic substrates using its proprietary “suftla” technology.”

seiko epson has announced the release of a prototype for a flexible 16kb sram module, shown above. the technology could have many applications, including the flexible displays that we have seen prototyped in the past year.

october 4, 2005 - seiko epson corp. has made what it claims is the world's first bendable sram (static random access memory) device, using low-temperature polysilicon tfts (thin film transistors), according to the nikkei english news.

Seiko Epson recently released their prototype of flexible 16KB TFT-SRAM memory module which is a major breaktrhough in flexible memory technology. In their statement, Seiko Epson said that they have “succeeded in transferring SRAM circuits initially formed on low-temperature polycrystalline Si TFT glass substrates onto plastic substrates using its proprietary SUFTLA technology.”

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