Seiko Epson recently released their prototype of flexible 16KB TFT-SRAM memory module which is a major breaktrhough in flexible memory technology. In their statement, Seiko Epson said that they have “succeeded in transferring SRAM circuits initially formed on low-temperature polycrystalline Si TFT glass substrates onto plastic substrates using its proprietary SUFTLA technology.”

This SUFTLA (Surface Free Technology by Laser Ablation /Annealing) technology lets Seiko Epson to create other flexible mediums using low temperatures. They use it to integrate all the circuit blocks that make up the memory into a single chip on a plastic substrate. The result is a TFT-SRAM that operates stably at high speed, and at low voltage.

On a side note, Seiko Epson has confirmed a successful demo of the flexible SRAM using an original 8 bit processor.

Flexible TFT-SRAM memory module features:

• Real TFT-SRAM, with one cell consisting of six transistors
• Short access time is realized by integrating a sense amplifier onto a flexible substrate
• TFT-SRAM can be used as the working memory for ACT11, Epson’s original asynchronous 8-bit microprocessor

[ Press Release ] [ Via MobileMag ]